Identifying the mechanism behind spin relaxation in organic materials

DOI

We wish to measure the low-field ALCs of a series of related functionalised acenes to identify which mechanism (spin orbit or hyperfine) is responsible for spin relaxation in organic materials, by deuteration and substituting heavy atoms into organic complexes. The identification of the relevant spin scattering mechanism could lead to major breakthroughs in spin dynamics in organic semiconductors, possibly generalised to all disordered materials. Most theories of spin relaxation rely on bands resulting from the periodic crystal lattice and therefore are not applicable to disordered materials. Whilst we believe that we already have sufficient data to achieve a high-profile publication, we believe that direct evidence for the underlying mechanism will significantly aid the theoretical model we are developing and increase the impact of this publication.

Identifier
DOI https://doi.org/10.5286/ISIS.E.24079401
Metadata Access https://icatisis.esc.rl.ac.uk/oaipmh/request?verb=GetRecord&metadataPrefix=oai_datacite&identifier=oai:icatisis.esc.rl.ac.uk:inv/24079401
Provenance
Creator Professor Alan Drew; Dr Maureen Willis; Dr Laura Nuccio; Dr Francis Pratt; Dr Leander Schulz; Mr Tom Glen
Publisher ISIS Neutron and Muon Source
Publication Year 2013
Rights CC-BY Attribution 4.0 International; https://creativecommons.org/licenses/by/4.0/
OpenAccess true
Contact isisdata(at)stfc.ac.uk
Representation
Resource Type Dataset
Discipline Photon- and Neutron Geosciences
Temporal Coverage Begin 2010-07-18T16:12:09Z
Temporal Coverage End 2010-07-22T07:21:43Z