Data about surface passivation of c-Ge by Al2O3 films

DOI

Data regarding the measurement of effective surface recombination velocity (Seff) and fixed charge (Qf) as a function of aSiCx thickness. Data of Capacitance-Voltage (C-V) curves. Data about EELS measurement with Ge, O and Si signals with and without an interface layer of 1 nm a-SiCx.

Identifier
DOI https://doi.org/10.34810/data707
Related Identifier IsCitedBy https://doi.org/10.1016/j.surfin.2022.102070
Metadata Access https://dataverse.csuc.cat/oai?verb=GetRecord&metadataPrefix=oai_datacite&identifier=doi:10.34810/data707
Provenance
Creator Martín García, Isidro (ORCID: 0000-0001-8833- 9057)
Publisher CORA.Repositori de Dades de Recerca
Contributor Martin Garcia, Isidro; Universitat Politècnica de Catalunya
Publication Year 2023
Funding Reference AEI PID2020-115719RB-C21/ES/DISPOSITIVOS DE GERMANIO DE ALTA EFICIENCIA PARA APLICACIONES TERMOFOTOVOLTAICAS DE BAJO COSTE ; AEI PID2020-116719RB-C41/ES/DESARROLLO DE COMPUESTOS MIXTOS CALCOGENUROS-HALUROS DE BAJA DIMENSION POR RUTAS FISICAS PARA APLICACIONES EN DISPOSITIVOS FOTOVOLTAICOS TANDEM ; AEI PID2019-109215RB-C41/ES/CONTACTOS SELECTIVOS Y CAPAS ACTIVOS PARA DISPOSITIVOS DE ENERGIA
Rights CC0 1.0; info:eu-repo/semantics/openAccess; http://creativecommons.org/publicdomain/zero/1.0
OpenAccess true
Contact Martin Garcia, Isidro (Universitat Politècnica de Catalunya)
Representation
Resource Type Measurement and test data; Dataset
Format text/plain
Size 1798; 18058; 1750; 18384; 8832; 6012; 8829; 6004; 183; 4776; 390; 12445
Version 1.0
Discipline Construction Engineering and Architecture; Engineering; Engineering Sciences