Atomic layer deposition (ALD) is a growing technology, enabling breakthroughs in semiconductor manufacturing, photovoltaics and energy storage. However, despite its technological success, lots of fundamental questions remain, and deposited materials do not always perform as envisioned. A lack of understanding of how the ALD process parameters impact the atomic scale structure of the as-deposited amorphous thin-films hampers us to improve their performance based on fundamental insights. Here, we aim to access the local- and medium-range order of atoms in ALD thin-films via pair distribution function analysis of grazing incidence X-ray total scattering measurements (GI-PDF). GI-PDF at ID15A will enable us to relate structural properties to ALD process parameters, such as the choice of reactants, deposition temperature and conditions used for plasma-activation of the reactants, providing the ALD field with a piece of fundamental insight it urgently needs.