Structural study of SiC//SiC interface made by wafer direct bonding

DOI

We wish to study the silicon carbide/silicon carbide interfaces using high energy reflectometry and grazing incidence scattering. The aim of the proposed study is to follow the thermal evolution of these interfaces. This knowledge is a prerequisite to understand the electrical properties of such assemblies and design new processes to make higher performance devices based on silicon carbide.

Identifier
DOI https://doi.org/10.15151/ESRF-ES-744173027
Metadata Access https://icatplus.esrf.fr/oaipmh/request?verb=GetRecord&metadataPrefix=oai_datacite&identifier=oai:icatplus.esrf.fr:inv/744173027
Provenance
Creator Maëlle LE CUNFF; Francois RIEUTORD ORCID logo; Samuel TARDIF ORCID logo; Zijie LU ORCID logo
Publisher ESRF (European Synchrotron Radiation Facility)
Publication Year 2025
Rights CC-BY-4.0; https://creativecommons.org/licenses/by/4.0
OpenAccess true
Representation
Resource Type Data from large facility measurement; Collection
Discipline Particles, Nuclei and Fields