We have recently performed a test experiment which demonstrates the potential (RB1510281) of using RF muon spectroscopy to manipulate the population of the levels of the FmuF state in PTFE. The three observed frequencies are a result of an entangled state and if the FmuF complex is irradiated at one of these frequencies the transition probability increases (or decreases) for the other levels. This means we can directly measure the state population under control of RF fields. We have shown a preliminary result and want to extend the experiment to get an estimate of the lifetimes of the levels by changing the RF delay time and specifically designed pulsed sequences. We would also like to confirm our observation using a single crystal as the population levels are different for a single crystal (LiHoYF) and amorphous PTFE. This experiment will open up a new field.