MuSR detection of optically-injected spin-polarized electrons in Silicon

DOI

Silicon is currently the base of all modern electronics and advanced computing. One route to future advanced computing called spintronics exploits the energy saving and quantum information encoding possible in the spin, rather than the charge of the electron. Silicon spintronics research has been impeded by the generally accepted absence of a means to optically inject spin-polarized electrons due to its indirect bandgap. We recently observed it is possible to inject spin-polarized electrons and detect these spin-polarized electrons using the difference in how they interact with spin-polarized muons. In the proposed research we hope to understand the detailed microscopic mechanism for the muon sensitivity to spin-polarized electrons and to quantify what fraction of optically-injected electrons are spin-polarized. The larger the fraction the more impact it will have on Silicon spintronics.

Identifier
DOI https://doi.org/10.5286/ISIS.E.84627318
Metadata Access https://icatisis.esc.rl.ac.uk/oaipmh/request?verb=GetRecord&metadataPrefix=oai_datacite&identifier=oai:icatisis.esc.rl.ac.uk:inv/84627318
Provenance
Creator Dr Ke Wang; Miss Jingliang Miao; Dr Koji Yokoyama; Dr Harry Tom; Professor Alan Drew; Mr John Muse; Dr James Lord
Publisher ISIS Neutron and Muon Source
Publication Year 2020
Rights CC-BY Attribution 4.0 International; https://creativecommons.org/licenses/by/4.0/
OpenAccess true
Contact isisdata(at)stfc.ac.uk
Representation
Resource Type Dataset
Discipline Photon- and Neutron Geosciences
Temporal Coverage Begin 2017-05-04T08:00:00Z
Temporal Coverage End 2017-05-10T07:39:46Z