We aim at studying proximity effects between a ferromagnetic thin film (either metallic or insulating) and a topological insulator (either undoped, or magnetically homogeneously or delta-doped). For this purpose, we have grown (CrxBi1-x)2Se/Te3 thin films of varying Cr concentration on Al2O3, as well as ferromagnetic FeCo and EuO layers. We have successfully demonstrated the enhancement of magnetic ordering in a topological insulator by ferromagnetic proximity coupling and hope that this study will allow us to further understand the magnetic doping of topological insulators by engineering the doping mechanism. Together with complementary XMCD and SQUID data, we hope to be able to understand and control the FM-TI interface.