Flash memories are the electronic component in which the feature size is scaled more rapidly and which have the largest capacity among semiconductor devices. We plan to expose different Flash memories at ISIS, to study the response of these devices to the neutron beam provided by the ChipIR line, which reproduces the terrestrial neutrons spectrum with several orders of magnitude of acceleration. Samples with both NAND (with a feature size down to 16-nm) and NOR (down to 45 nm) architecture will be exposed to neutrons and results will be compared with those previously obtained at VESUVIO. Some of these samples will also be irradiated at the Los Alamos Neutron Science Center (LANSCE) to compare the effect of different energy spectra on the soft error rate. The analysis will be focused on Floating Gate (FG) errors and variability (lot-to-lot, sample-to sample, cell-to-cell etc.).