9 datasets found

We have synthesised the ill characterised perovskite PbRuO3 at high pressure and temperature. Synchrotron powder x-ray diffraction shows the room temperature structure to be...

Ferromagnetic III-V semiconductors lie at the confluence of magnetic storage and optoelectronic technologies, allowing the development of semiconductor heterostructure devices...

Ferromagnetic III-V semiconductors lie at the confluence of magnetic storage and optoelectronic technologies, allowing the development of semiconductor heterostructure devices...

Nanocarbon materials such as C60 show fascinating transport properties when in contact with a ferromagnet. Previous results indicate that this could be due to a spin polarized...

For many Heusler compounds a spin polarisation close to 100% was predicted by band structure calculations. Thus if those materials are incorporated in magnetic tunnel junctions,...

The realisation of room temperature magnetic semiconductors would be a significant milestone on the route to the next generation of spintronic materials. Raising the ordering...

The one dimensional material In2VO5 contains frustrated zigzag chains of corner sharing V 4+ (S = 1/2) square based pyramids interspersed with sheets of edge sharing InO6...

A large magnetoresistance (TMR) is expected when half metallic ferromagnets are used in magnetic tunneling junctions with polycrystalline AlOx barrier. We have recently observed...

High quality epitaxial films of the multiferroic BiFeO3 - PbTiO3 have been prepared using pulsed laser deposition. Using an electric field, we will induce a ferroelectrically...