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Muonium Defect Levels in 4H Silicon Carbide
We propose to obtain the temperature dependence of the diamagnetic spin-precession amplitudes up to 1100 K for the three electrical types of 4H-SiC in order to extract the Mu... -
Studies of Muon-Beam-Induced currents in semi-imsulating GaAs
This proposal is a continuation of our recent proposal RB 610004 where this partcurrent measurements) was not completed due to the reduced beam intensity. Currents experiment...