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Muonium Defect Levels in 4H Silicon Carbide
We propose to obtain the temperature dependence of the diamagnetic spin-precession amplitudes up to 1100 K for the three electrical types of 4H-SiC in order to extract the Mu... -
Study of Magnetic Features in WQeakly Mn-Doped ZnGeP2
Continued investigation of magnetic fluctuations in the Mn-doiped chalcopyrite semiconductor ZnGeP2 is proposed using LF-MuSR depolarization rates. Due to ferromagnetism above... -
Motion of Positively Charged Muonium Centres in Transparent Conducting Oxides
We propose further zero-field muon spin depolarization measurements at temperatures above 300K in order to determine barriers for thermal diffusion of positively charged muonium...
