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Auger recombination in low temperature silicon measured by photo-MuSR technique
We measure electron-hole recombination rate in low-temperature pure silicon using the photo-MuSR technique. The previous works have measured the recombination rate down to -30... -
Detection of Spin-Polarized Conduction Electrons in Si by MuSR
One of the challenges of developing Silicon-based spintronics technology is developing non-destructive methods for characterizing spin-polarized conduction electrons. Si is...
