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Direct spectroscopy of muon donor and acceptor levels in silicon carbide
We will perform direct laser spectroscopy to measure the ionisation energy of muon defect levels in a semiconductor - specifically silicon carbide. We should see a broad... -
Spectroscopy of muon centres in n-type silicon carbide
We propose to continue laser spectroscopy measurements of the muonium (Mu-) centres in n-type doped silicon carbide. Scanning a wide wavelength range, and changing the relative...