-
Ab initio simulation of band-to-band tunneling FETs with single- and few-laye...
Full-band atomistic quantum transport simulations based on first principles are employed to assess the potential of band-to-band tunneling field-effect-transistors (TFETs) with... -
Ab initio mobility of single-layer MoS2 and WS2: comparison to experiments an...
We combine the linearized Boltzmann Transport Equation (LBTE) and quantum transport by means of the Non-equilibrium Green's Functions (NEGF) to simulate monolayer MoS2 and WS2...