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Ab initio simulation of band-to-band tunneling FETs with single- and few-laye...
Full-band atomistic quantum transport simulations based on first principles are employed to assess the potential of band-to-band tunneling field-effect-transistors (TFETs) with... -
Electron transport through metal/MoS2 interfaces: edge- or area-dependent pro...
In ultra-thin two-dimensional (2-D) materials, the formation of ohmic contacts with top metallic layers is a challenging task that involves different processes than in bulk-like...